SEMICONDUCTOR MEASUREMENT TECHNOLOGY: MICROELECTRONIC TEST PATTERN NBS-3 FOR EVALUATING THE RESISTIVITY-DOPANT DENSITY RELATIONSHIP OF SILICON.BUEHLER MG.1976; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1976; VOL. 400; NO 22; PP. 1-49; BIBL. 2 P.Serial Issue

PERIPHERAL AND DIFFUSED LAYER EFFECTS ON DOPING PROFILESBUEHLER MG.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 11; PP. 1171-1178; BIBL. 21 REF.Serial Issue

FORECASTING INTERSECTION TRAFFIC VOLUMESBUEHLER MG.1983; JOURNAL OF TRANSPORTATION ENGINEERING; ISSN 512737; USA; DA. 1983; VOL. 109; NO 4; PP. 519-533; BIBL. 15 REF.Article

DOPANT PROFILES DETERMINED FROM ENHANCEMENT-MODE MOSFET DC MEASUREMENTS.BUEHLER MG.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 12; PP. 848-850; BIBL. 14 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY: DEFECTS IN PN JUNCTIONS AND MOS CAPACITORS OBSERVED USING THERMALLY STIMULATED CURRENT AND CAPACITANCE MEASUREMENTS-VIDEOTOPE SCRIPT.BUEHLER MG.1976; NATION. BUR. STAND., SPEC. PABL.; U.S.A.; DA. 1976; NO 400-26; PP. (17P.); BIBL. 3 REF.Serial Issue

THE D-C MOSFET DOPANT PROFILE METHODBUEHLER MG.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 3; PP. 701-704; BIBL. 9 REF.Article

COMPREHENSIVE TEST PATTERNS WITH MODULAR TEST STRUCTURES: THE 2 BY N PROBE-PAD ARRAY APPROACHBUEHLER MG.1979; SOLID STATE TECHNOL.; USA; DA. 1979; VOL. 22; NO 10; PP. 89-94; BIBL. 17 REF.Article

EFFECT OF THE DRAIN-SOURCE VOLTAGE ON DOPANT PROFILES OBTAINED FROM THE DC MOSFET PROFILE METHOD = EFFET DE LA TENSION SOURCE-PUITS SUR LES PROFILS DE DOPAGE OBTENUS PAR LA METHODE DU PROFIL MOSFET EN COURANT CONTINUBUEHLER MG.1980; IEEE TRANS-ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2273-2279; BIBL. 10 REF.Article

THE USE OF ELECTRICAL TEST STRUCTURE ARRAYS FOR INTEGRATED CIRCUIT PROCESS EVALUATIONBUEHLER MG.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 10; PP. 2284-2290; BIBL. 20 REF.Article

AN ANALYTICAL EXPRESSION FOR THE EVALUATION OF LEAKAGE CURRENT IN THE INTEGRATED GATED-DIODE ELECTROMETERCARVER GP; BUEHLER MG.1980; IEEE TRANS-ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 12; PP. 2245-2252; BIBL. 14 REF.Article

A WAFER CHUCK FOR USE BETWEEN -196 AND 350^OCKOYAMA RY; BUEHLER MG.1979; NATION. BUR. STAND., SPEC. PUBL.; USA; DA. 1979; NO 400-55; 17 P.; BIBL. 10 REF.Serial Issue

MEASUREMENT ON THE RESISTIVITY OF A THIN SQUARE SAMPLE WITH A SQUARE FOUR-PROBE ARRAY.BUEHLER MG; THURBER WR.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 5; PP. 403-406; BIBL. 9 REF.Article

NOVEL VARIABLE-TEMPERATURE CHUCK FOR USE IN THE DETECTION OF DEEP LEVELS IN PROCESSED SEMICONDUCTOR WAFERSKOYAMA RY; BUEHLER MG.1979; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1979; VOL. 50; NO 8; PP. 983-987; BIBL. 12 REF.Article

A PLANAR FOUR-PROBE TEST STRUCTURE FOR MEASURING BULK RESISTIVY.BUEHLER MG; THURBER WR.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 8; PP. 968-974; BIBL. 7 REF.Article

AN EXPERIMENTAL STUDY OF VARIOUS CROSS SHEET RESISTOR TEST STRUCTURES.BUEHLER MG; THURBER WR.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 645-650; BIBL. 7 REF.Article

A NEW METHOD FOR CALCULATING BACKGROUND DOPANT DENSITY FROM P-N JUNCTION COMPACITANCE-VOLTAGE MEASUREMENTS.MATTIS RL; BUEHLER MG.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 12; PP. 1918-1933; BIBL. 15 REF.Article

A NUMERICAL ANALYSIS OF VARIOUS CROSS SHEET RESISTOR TEST STRUCTURES.DAVID JM; BUEHLER MG.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 6; PP. 539-543; BIBL. 15 REF.Article

A STUDY OF THE GOLD ACCEPTOR IN A SILICON P⁺N JUNCTION AND AN N-TYPE MOS CAPACITOR BY THERMALLY STIMULATED CURRENT AND CAPACITANCE MEASUREMENTS.BUEHLER MG; PHILLIPS WE.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 9; PP. 777-788; H.T. 1; BIBL. 11 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY: A BASIC PROGRAM FOR CALCULATING DOPANT DENSITY PROFILES FROM CAPACITANCE-VOLTAGE DATA.MATTIS RL; BUEHLER MG.1975; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1975; NO 400-11; PP. 1-33; BIBL. 15 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY: MICROELECTRONIC TEST PATTERN NBS-4.THURBER WR; BUEHLER MG.1978; NATION. BUR. STAND., SPER. PUBL.; U.S.A.; DA. 1978; NO 400-32Article

MALE RATS WITH INHERITED INSENSITIVITY TO ANDROGEN SHOW REDUCED SEXUAL BEHAVIOR.BEACH FA; BUEHLER MG.1977; ENDOCRINOLOGY; U.S.A.; DA. 1977; VOL. 100; NO 1; PP. 197-200; BIBL. 12 REF.Article

SEXUAL CHARACTERISTICS OF FEMALE DOGS DURING SUCCESSIVE PHASES OF THE OVARIAN CYCLEBEACH FA; DUNBAR IF; BUEHLER MG et al.1982; HORMONES AND BEHAVIOR; ISSN 0018-506X; GBR; DA. 1982; VOL. 16; NO 4; PP. 414-442; BIBL. 3 P.Article

SUPPRESSION OF MEASUREMENT INTERFERENCES FROM INTERFACE STATES AND MOBILE IONS IN THERMALLY STIMULATED CURRENT MEASUREMENTS IN AN MOS CAPACITORPHILLIPS WE; KOYAMA RY; BUEHLER MG et al.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 11; PP. 1979-1981; BIBL. 4 REF.Article

COMPETITIVE BEHAVIOR IN MALE, FEMALE, AND PSEUDOHERMAPHRODITIC FEMALE DOGSBEACH FA; BUEHLER MG; DUNBAR IF et al.1982; JOURNAL OF COMPARATIVE AND PHYSIOLOGICAL PSYCHOLOGY; ISSN 0021-9940; USA; DA. 1982; VOL. 96; NO 6; PP. 855-874; BIBL. 6 REF.Article

BRIDGE AND VAN DER PAUW SHEET RESISTORS FOR CHARACTERIZING THE LINE WIDTH OF CONDUCTING LAYERS.BUEHLER MG; GRANT SD; THURBER WR et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 650-654; BIBL. 9 REF.Article